According to a recent report in the Nihon Keizai Shimbun, Japanese NTT Microsystem Integration Laboratories, a unit of NTT, has been successful in producing next-generation RRAM (Resistance Random Access Memory) chips by using materials already used for the mass production of other products, including smart cards and FeRAM (Ferroelectric Random Access Memory). The material used is bismuth titanium oxide, whereas before RRAM chips were manufactured by using materials such as praseodymium, calcium, and manganese oxide, for which it would have been necessary to develop new mass production technologies. The success of the NTT unit in using existing materials is likely to be an important step forward towards low-cost mass production of RRAM. RRAM is claimed to have higher operating speeds than flash memory while consuming less power.